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2SK3058 - N-Channel MOSFET

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A).
  • Low Ciss : Ciss = 2100 pF (TYP. ).
  • Built-in Gate Protection Diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3058 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3058 2SK3058-S 2SK3058-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A) • Low Ciss : Ciss = 2100 pF (TYP.) • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 ±20 +20, –10 ±55 ±165 58 1.