2SK3058 Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
2SK3058 Key Features
- Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28
- Low Ciss : Ciss = 2100 pF (TYP.)
- Built-in Gate Protection Diode