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2SK3361 - N-Channel MOSFET

General Description

The 2SK3361 is N-Channel MOS Field Effect Transistor designed for high current switching application.

Key Features

  • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 20 A) 5.
  • Low Ciss: Ciss = 4900 pF TYP.
  • Built-in gate protection diode.
  • Isolated TO-220 package (Isolated TO-220).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3361 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3361 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3361 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 20 A) 5 • Low Ciss: Ciss = 4900 pF TYP. • Built-in gate protection diode • Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 100 ±20 +20, –10 ±40 ±160 35 2.