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NE856. For precise diagrams, and layout, please refer to the original PDF.
NoiseDISFigure,NF(dB)CONTINUED Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON H...
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SG, GA (dB) NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST E B 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost.
NE856 Datasheet
