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NE856 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

Datasheet Summary

Description

NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications.

Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity.

Features

  • HIGH GAIN.

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Datasheet preview – NE856

Datasheet Details

Part number NE856
Manufacturer NEC
File Size 1.07 MB
Description NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE856 Datasheet
Additional preview pages of the NE856 datasheet.

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Full PDF Text Transcription

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NoiseDISFigure,NF(dB)CONTINUED Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST E B 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost.
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