NE856
Description
NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity.
Key Features
- HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
- LOW NOISE FIGURE: 1.1 dB at 1 GHz
- HIGH COLLECTOR CURRENT: 100 mA
- HIGH RELIABILITY METALLIZATION
- LOW COST E B 00 (CHIP)
