Datasheet Details
| Part number | NEL200101-24 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 88.48 KB |
| Description | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier |
| Download | NEL200101-24 Download (PDF) |
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| Part number | NEL200101-24 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 88.48 KB |
| Description | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier |
| Download | NEL200101-24 Download (PDF) |
|
|
|
AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.
OUTLINE DIMENSIONS (Unit: mm) 1.0 MIN.
DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power.
| Part Number | Description |
|---|---|
| NEL2004F02-24 | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier |
| NEL2012F03-24 | NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER |
| NEL2035F03-24 | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier |