NEL2004F02-24 - NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

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NEC

NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier by NEC - Datasheet Preview — Datasheet preview – NEL2004F02-24

Datasheet Details

Part number	NEL2004F02-24
Manufacturer	NEC
File Size	89.27 KB
Description	NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
Datasheet	NEL2004F02-24 Datasheet
Additional preview pages of the NEL2004F02-24 datasheet.

Product details

Description

AND APPLICATIONS NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.OUTLINE DIMENSIONS (Unit: mm) 2 2 ±0.2 3 ±0.2 2 ±0.2 2 × φ 3.2 ±0.3 1 1 5.85 ±0.2 2.58 ±0.3

Features

High Linear Power and Gain 4.2 ±0.4 0.1 +0.05.
0.02 1 1 3 3.6 ±0.5 3.6 ±0.5 12.4 ±0.2 9.2 ±0.2 4.6 ±0.2.
Low Internal Modulation Distortion.
High Reliability Gold Metallization.
Emitter Ballasting.
24 V Operation 1 -.

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Published: May 7, 2005 |