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NEL2004F02-24

Manufacturer: NEC (now Renesas Electronics)
NEL2004F02-24 datasheet preview

Datasheet Details

Part number NEL2004F02-24
Datasheet NEL2004F02-24_NEC.pdf
File Size 89.27 KB
Manufacturer NEC (now Renesas Electronics)
Description NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
NEL2004F02-24 page 2 NEL2004F02-24 page 3

NEL2004F02-24 Overview

AND APPLICATIONS NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit:.

NEL2004F02-24 Key Features

  • High Linear Power and Gain
  • Low Internal Modulation Distortion
  • High Reliability Gold Metallization
  • Emitter Ballasting
  • 24 V Operation
  • EMITTER 2
  • BASE 3
  • COLLECTOR
NEC (now Renesas Electronics) logo - Manufacturer

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