| Part number | NEL2012F03-24 |
|---|---|
| Datasheet | NEL2012F03-24_NEC.pdf |
| File Size | 108.66 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER |
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The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability.
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NEL200101-24 | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier |
| NEL2004F02-24 | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier |
| NEL2035F03-24 | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier |
