NEL2012F03-24 Datasheet (NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER)

Part: NEL2012F03-24
Manufacturer: NEC (official site)
Size: 108.66 KB

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NEL2012F03-24 Description

The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability.