NES2527B-30 Description
The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 µm gate length for increased linear gain.
NES2527B-30 Key Features
- High output power
- High gain
- High power added efficiency
- Internally matched input
- High reliability