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NES2527B-30 - 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

General Description

The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band.

Internal input matching circuits are designed to optimize performance.

The device has a 0.8 µm gate length for increased linear gain.

Key Features

  • High output power.
  • High gain.
  • High power added efficiency.
  • Internally matched input.
  • High reliability 2.4 0.1 4.5 MAX 1.8 0.2 MAX.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NES2427P-45 45 W S-BAND PUSH-PULL POWER GaAs MES FET
NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET
NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET
NES1823P-140 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 µm gate length for increased linear gain. technology. The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for stability. surface To reduce thermal 17.4±0.3 PACKAGE DIMENSIONS (UNIT: mm) 24±0.3 20.4 SOURCE 1.0±0.1 GATE 2.4 8.0 R1.2 resistance, the device uses PHS (Plated Heat Sink) DRAIN FEATURES • High output power • High gain • High power added efficiency • Internally matched input • High reliability 2.4 0.1 4.5 MAX 1.8 0.