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NES1821B-30 - 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

General Description

The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band.

Internal input matching circuits are designed to optimize performance.

The device has a 0.8 mm gate length for increased linear gain.

Key Features

  • DRAIN 0.1 2.4 0.2 MAX 4.5 MAX 1.8 High output power High gain High power added efficiency Internally matched input High reliability.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET
NES1823P-140 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET
NES1823P-30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET
NES1823P-45 45 W L / S-BAND PUSH-PULL POWER GaAs MES FET
NES1823P-50 50 W L-BAND PUSH-PULL POWER GaAs MES FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat Sink) technology. The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for R1.2 17.4±0.3 8.0 2.4 SOURCE PACKAGE DIMENSIONS (UNIT: mm) 24±0.3 20.4 1.0±0.1 GATE surface stability. FEATURES · · · · · DRAIN 0.1 2.4 0.2 MAX 4.5 MAX 1.