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NES1823P-30 - 30 W L-S BAND PUSH-PULL POWER GaAs MES FET

General Description

The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems.

It is capable of delivering 30 watts of output power (CW) with high linear gain, high efficiency and excellent distortion.

Key Features

  • Push-pull type N-channel GaAs MES FET.
  • High output power.
  • High linear gain : 30 W TYP. : 13 dB TYP.
  • High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 2.2 GHz.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET
NES1823P-140 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET
NES1823P-45 45 W L / S-BAND PUSH-PULL POWER GaAs MES FET
NES1823P-50 50 W L-BAND PUSH-PULL POWER GaAs MES FET
NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. The device employs 0.