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NES1823P-45 - 45 W L / S-BAND PUSH-PULL POWER GaAs MES FET

General Description

The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems.

Key Features

  • Push-pull type N-channel GaAs MES FET.
  • VDS = 12.0 V operation.
  • High output power: Pout = 45 W TYP.
  • High linear gain: GL = 12 dB TYP.
  • High power added efficiency: ηadd = 45 % TYP. @ VDS = 12.0 V, IDset = 4.0 A (total), f = 2.20 GHz.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET
NES1823P-140 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET
NES1823P-30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET
NES1823P-50 50 W L-BAND PUSH-PULL POWER GaAs MES FET
NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-45 45 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.