NES1823P-100 Overview
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.
NES1823P-100 Key Features
- Push-pull type N-channel GaAs MESFET
- High Output Power : 100 W TYP
- High Linear Gain : 11.0 dB TYP
- High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz