NEC NES1823P-100
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.| Part No. | NES1823P-100 |
|---|---|
| Datasheet | NES1823P-100 Download |
| Manufacturer |  NEC |
| Description | 100W L-BAND PUSH-PULL POWER GaAs MESFET |
| Buy | Stock & Price |
DESCRIPTION
The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.FEATURES
● Push-pull type N-channel GaAs MESFET● High Output Power : 100 W TYP.
● High Linear Gain : 11.0 dB TYP.
● High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-100 T-92 Package Supplying Form ESD protective envelope Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NES1823P-100)
ABSOLUTE MAXIMUM RATINGS
(TA = +25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS...
