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NP34N055HHE - N-Channel Power MOSFET

General Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A).
  • Low Ciss : Ciss = 1600 pF TYP.
  • Built-in gate protection diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HHE, NP34N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER NP34N055HHE NP34N055IHE PACKAGE TO-251 TO-252 DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A) • Low Ciss : Ciss = 1600 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 (TO-251) 55 ±20 ±34 V V A A W W A mJ °C °C (TO-252) VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg DataShee DataSheet4U.