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NP34N055ILE - N-Channel Power MOSFET

Download the NP34N055ILE datasheet PDF. This datasheet also covers the NP34N055HLE variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 22 mΩ MAX. (VGS = 5 V, ID = 17 A).
  • Low Ciss : Ciss = 2000 pF TYP.
  • Built-in gate protection diode NP34N055ILE Note NP34N055SLE Note Not for new design. TO-252 (JEITA) / MP-3Z TO-252 (JEDEC) / MP-3ZK (TO-251).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP34N055HLE-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Renesas

Part Number Description
NP34N055HLE N-Channel Power MOSFET
NP34N055SHE N-Channel Power MOSFET
NP34N055SLE N-Channel Power MOSFET
NP30N04QUK Dual N-channel Power MOSFET
NP30N06QDK Dual N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HLE, NP34N055ILE, NP34N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP34N055HLE TO-251 (JEITA) / MP-3 FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 22 mΩ MAX. (VGS = 5 V, ID = 17 A) • Low Ciss : Ciss = 2000 pF TYP. • Built-in gate protection diode NP34N055ILE Note NP34N055SLE Note Not for new design.