NP34N055IHE Overview
Description
These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.
Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A)
- Low Ciss : Ciss = 1600 pF TYP
- Built-in gate protection diode
