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NP34N055IHE - N-Channel Power MOSFET

Download the NP34N055IHE datasheet PDF. This datasheet also covers the NP34N055HHE variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A).
  • Low Ciss : Ciss = 1600 pF TYP.
  • Built-in gate protection diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP34N055HHE_NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
NP34N055ILE N-Channel Power MOSFET Renesas
NP34N055HLE N-Channel Power MOSFET Renesas
NP34N055SHE N-Channel Power MOSFET Renesas
NP34N055SLE N-Channel Power MOSFET Renesas
NP3400MR-S N-Channel Enhancement Mode MOSFET natlinear

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NP34N055HHE N-Channel Power MOSFET
NP32N055HDE N-Channel Power MOSFET
NP32N055HLE N-Channel Power MOSFET
NP32N055IDE N-Channel Power MOSFET
NP32N055ILE N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HHE, NP34N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER NP34N055HHE NP34N055IHE PACKAGE TO-251 TO-252 DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A) • Low Ciss : Ciss = 1600 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 (TO-251) 55 ±20 ±34 V V A A W W A mJ °C °C (TO-252) VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg DataShee DataSheet4U.