NP80N03KLE
Description
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Channel Temperature 175 degree rated
- Super Low On-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
- Low Ciss : Ciss = 2600 pF TYP
- Built-in Gate Protection Diode
