Click to expand full text
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1890
N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA1890 is a switching device which can be driven directly by a 4.0-V power source. The µPA1890 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.2 MAX. 1.0±0.05 0.25
° 3° +5 –3°
FEATURES
• Can be driven by a 4.0-V power source • Low on-state resistance N-Channel RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 37 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 47 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) P-Channel RDS(on)1 = 37 mΩ MAX.