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UPA2730TP - SWITCHING N- AND P-CHANNEL POWER MOS FET

Datasheet Summary

Description

The µPA2730TP which has a heat spreader is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.

1.49 ±0.21 1.44 TYP.

Features

  • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 7.5 A) RDS(on)2 = 10.5 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 7.5 A) RDS(on)3 = 12.0 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 7.5 A).
  • Low Ciss: Ciss = 4670 pF TYP.
  • Small and surface mount package (Power HSOP8) 1 5.2 +0.17.
  • 0.2 4 0.8 ±0.2 S +0.10.
  • 0.05 6.0 ±0.3 4.4 ±0.15 0.05 ±0.05 0.15 1.27 TYP. 0.40 1 +0.10.
  • 0.05 0.10 S 0.12 M 1.1 ±0.2 4 2.9.

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Datasheet Details

Part number UPA2730TP
Manufacturer NEC
File Size 80.30 KB
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Datasheet download datasheet UPA2730TP Datasheet
Additional preview pages of the UPA2730TP datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2730TP SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The µPA2730TP which has a heat spreader is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. 1.49 ±0.21 1.44 TYP. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = –10 V, ID = –7.5 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = –4.5 V, ID = –7.5 A) RDS(on)3 = 12.0 mΩ MAX. (VGS = –4.0 V, ID = –7.5 A) • Low Ciss: Ciss = 4670 pF TYP. • Small and surface mount package (Power HSOP8) 1 5.2 +0.17 –0.2 4 0.8 ±0.2 S +0.10 –0.05 6.0 ±0.3 4.4 ±0.15 0.05 ±0.05 0.15 1.27 TYP. 0.40 1 +0.10 –0.05 0.10 S 0.12 M 1.1 ±0.2 4 2.
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