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UPA2733GR - P-CHANNEL POWER MOSFET

Datasheet Summary

Description

The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on.

Features

  • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 2.5 A).
  • Low Ciss: Ciss = 870 pF TYP.
  • Built-in gate protection diode.
  • Small and surface mount package (Power SOP8) 1.8 MAX. 1.44 14 5.37 MAX. 6.0 ±0.3 4.4 +0.10.
  • 0.05 0.15 1.27 0.78 MAX. 0.5 ±0.2 0.8 0.10 0.05 MIN.

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Datasheet Details

Part number UPA2733GR
Manufacturer NEC
File Size 147.28 KB
Description P-CHANNEL POWER MOSFET
Datasheet download datasheet UPA2733GR Datasheet
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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The μ PA2733GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. PACKAGE DRAWING (Unit: mm) 85 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −10 V, ID = −2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) • Low Ciss: Ciss = 870 pF TYP. • Built-in gate protection diode • Small and surface mount package (Power SOP8) 1.8 MAX. 1.44 14 5.37 MAX. 6.0 ±0.3 4.4 +0.10 –0.05 0.15 1.27 0.78 MAX. 0.5 ±0.2 0.8 0.10 0.05 MIN. ORDERING INFORMATION 0.40 +0.10 –0.05 0.
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