Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2780GR
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DESCRIPTION
The µPA2780GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
Features
- Built a Schottky Barrier Diode
- Low on-state resistance RDS(on)1 = 6.2 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 8.7 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 = 10.3 mΩ TYP. (VGS = 4.0 V, ID = 7 A)
- Low Ciss: Ciss = 1200 pF TYP.
- Small and surface mount package (Power SOP8)
1 4 5.37 MAX.
+0.10
- 0.05
6.0 ±0.3 4.4 0.8
1.8...