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UPA2780GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

Datasheet Summary

Description

The µPA2780GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside.

This product is designed for synchronous DC/DC converter application.

Features

  • Built a Schottky Barrier Diode.
  • Low on-state resistance RDS(on)1 = 6.2 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 8.7 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 = 10.3 mΩ TYP. (VGS = 4.0 V, ID = 7 A).
  • Low Ciss: Ciss = 1200 pF TYP.
  • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10.
  • 0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05 0.12 M.

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Datasheet Details

Part number UPA2780GR
Manufacturer NEC
File Size 64.08 KB
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Datasheet download datasheet UPA2780GR Datasheet
Additional preview pages of the UPA2780GR datasheet.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2780GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION The µPA2780GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES • Built a Schottky Barrier Diode • Low on-state resistance RDS(on)1 = 6.2 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 8.7 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 = 10.3 mΩ TYP. (VGS = 4.0 V, ID = 7 A) • Low Ciss: Ciss = 1200 pF TYP. • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.
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