Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2782GR
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DESCRIPTION
The µPA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
Features
- Built a Schottky Barrier Diode
- Low on-state resistance RDS(on)1 = 11 mΩ TYP. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 16 mΩ TYP. (VGS = 4.5 V, ID = 5.5 A) RDS(on)3 = 19 mΩ TYP. (VGS = 4.0 V, ID = 5.5 A)
- Low Ciss: Ciss = 660 pF TYP.
- Small and surface mount package (Power SOP8)
1 4 5.37 MAX.
+0.10
- 0.05
6.0 ±0.3 4.4 0.8
1.8...