Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA677TB
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA677TB is a switching device which can be driven directly by a 2.5 V power source. The µPA677TB Features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
1.25 ±0.1 2.1 ±0.1
PACKAGE DRAWING (Unit: mm)
0.2 -0
+0.1
0.15 -0.05
+0.1
4 0 to 0.1
Features
- 2.5 V drive available
- Low on-state resistance RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
- Two MOS FET...
