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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA679TB
N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available • Low on-state resistance N-ch RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A) P-ch RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) • Two MOS FET circuits in same size package as SC-70
PACKAGE DRAWING (Unit: mm)
0.2 -0
+0.1
0.15 -0.05
+0.1
1.25 ±0.1
2.1 ±0.
UPA679TB Datasheet
