• Part: UPA678TB
  • Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 60.91 KB
Download UPA678TB Datasheet PDF
NEC
UPA678TB
DESCRIPTION The µ PA678TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA678TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.2 -0 +0.1 +0.1 0.15 -0.05 FEATURES - 2.5 V drive available - Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = - 4.5 V, ID = - 0.20 A) RDS(on)2 = 1.55 Ω MAX. (VGS = - 4.0 V, ID = - 0.20 A) RDS(on)3 = 2.98 Ω MAX. (VGS = - 2.5 V, ID = - 0.15 A) - Two MOS FET circuits in same size package as SC-70 1.25 ±0.1 2.1 ±0.1 4 0 to 0.1 3 0.7 0.9 ±0.1 1.3 2.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE SC-88 (SSP) µ PA678TB Marking: XA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg - 20 m12 m0.25 m1.00 0.2 150...