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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA806T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
• Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1 1.25±0.1
0.65 0.65
2.0±0.2
1.3
2
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
3
0.9±0.1
µPA806T
0.7
4
5
µPA806T-T1
Taping products (3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.
UPA806T Datasheet
