UPA861TD - NECs NPN SILICON RF TWIN TRANSISTOR

NEC (now Renesas Electronics)

General Description

PIN CONNECTIONS 1.

Collector (Q1) 2.

Emitter (Q1) 3.

Key Features

LOW.

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UPA861TD necs npn silicon rf twin transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	UPA861TD
Manufacturer	NEC (now Renesas Electronics)
File Size	129.41 KB
Description	NECs NPN SILICON RF TWIN TRANSISTOR
Datasheet	UPA861TD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES • • • • • LOW VOLTAGE, LOW CURRENT OPERATION LOW CAPACITANCE FOR WIDE TUNING RANGE SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE: Just 0.50 mm high 0.4 1 UPA861TD OUTLINE DIMENSIONS (Units in mm) Package Outline TD (TOP VIEW) 1.0±0.05 0.8 +0.07 -0.05 (Top View) 0.15±0.05 6 C1 1 Q1 6 B1 vX 3 4 TWO DIFFERENT DIE TYPES: Q1 - Ideal buffer amplifier transistor Q2 - Ideal oscillator transistor IDEAL FOR >3 GHz OSCILLATORS +0.07 -0.05 2 0.8 5 1.2 E1 0.4 2 Q2 5 E2 • C2 3 4 B2 NEC's UPA861TD contains one NE894 and one NE687 NPN high frequency silicon bipolar chip. The NE894 is an excellent oscillator chip, featuring high fT and low current, low voltage operation.