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UPA862TD - NECs NPN SILICON RF TWIN TRANSISTOR

General Description

NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip.

The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects.

The NE685 is an excellent buffer transistor, featuring low noise and high gain.

Key Features

  • LOW.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES • • • • LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE: 1 UPA862TD OUTLINE DIMENSIONS (Units in mm) Package Outline TD (TOP VIEW) 1.0±0.05 0.8 +0.07 -0.05 (Top View) 0.15±0.05 6 Just 0.50 mm high 0.4 TWO DIFFERENT DIE TYPES: Q1 - Ideal buffer amplifier transistor Q2 - Ideal oscillator transistor 1.2 +0.07 -0.05 0.8 C1 1 Q1 6 B1 vY 2 5 E1 4 0.4 2 Q2 5 E2 • IDEAL FOR 1-2 GHz OSCILLATORS 3 C2 3 4 B2 DESCRIPTION NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects.