Datasheet4U Logo Datasheet4U.com

UPC2747T - Si MMIC AMPLIFIER

Datasheet Summary

Description

The UPC2747T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process.

The NESAT III process produces transistors with fT approaching 20 GHz.

This amplifier was designed for 900 MHz receivers in cellular and cordless telephone applications.

Features

  • LOW.

📥 Download Datasheet

Datasheet preview – UPC2747T

Datasheet Details

Part number UPC2747T
Manufacturer NEC
File Size 59.24 KB
Description Si MMIC AMPLIFIER
Datasheet download datasheet UPC2747T Datasheet
Additional preview pages of the UPC2747T datasheet.

📁 Similar Datasheet

  • UPC2709T - 2.5GHz SILICON MMIC WIDE-BAND AMPLIFIER (CEL)
  • UPC2709TB - SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (CEL)
  • uPC271 - High Performance Comparator (Renesas)
  • uPC2710TB - SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (Renesas)
  • UPC2710TB - SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (CEL)
  • UPC2711TB - SILICON MMIC WIDEBAND AMPLIFIER (CEL)
  • UPC2712T - 2.5GHz SILICON MMIC WIDE-BAND AMPLIFIER (CEL)
  • UPC2712TB - SILICON MMIC WIDEBAND AMPLIFIER (CEL)
  • UPC272 - (UPC272 / UPC319) (ETC)
  • UPC2721GV - SILICON MMIC L-BAND DOWN CONVERTER (CEL)
Other Datasheets by NEC
  • UPC2747TB - 3 V/ SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS
  • UPC2745T - 3 V/ 2.7 GHz Si MMIC WIDEBAND AMPLIFIER
  • UPC2745TB - 3 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS
  • UPC2746TB - 3 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS
  • UPC2748TB - 3 V/ SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS
  • UPC2749T - 3 V/ 1900 MHz LOW NOISE SI MMIC AMPLIFIER
  • UPC2749TB - 3 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS
  • UPC2708T - 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

Full PDF Text Transcription

Click to expand full text
3 V, 900 MHz Si MMIC AMPLIFIER UPC2747T FEATURES • LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V • LOW POWER CONSUMPTION: 15 mW TYP • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 5 mA 14 4.5 GS 12 4.0 Gain, GS (dB) Noise Figure, NF (dB) DESCRIPTION The UPC2747T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed for 900 MHz receivers in cellular and cordless telephone applications. Operating on a 3 volt supply (1.8 volt minimum) this IC is ideally suited for handheld, portable designs.
Published: |