| Part number | UPC2747T |
|---|---|
| Datasheet | UPC2747T-NEC.pdf |
| File Size | 59.24 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | Si MMIC AMPLIFIER |
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The UPC2747T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed for 900 MHz receivers in cellular and cordless telephone applications.
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| UPC2747TB | 3 V/ SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS |
| UPC2745T | 3 V/ 2.7 GHz Si MMIC WIDEBAND AMPLIFIER |
| UPC2745TB | 3 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS |
| UPC2746TB | 3 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS |
| UPC2748TB | 3 V/ SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS |
| UPC2749T | 3 V/ 1900 MHz LOW NOISE SI MMIC AMPLIFIER |
| UPC2749TB | 3 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS |
| UPC2708T | 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER |
| UPC2708TB | 5 V/ SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER |
| UPC2709T | 5 V / SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER |
