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UPC8179TB - SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

General Description

The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications.

This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC.

This low current amplifier operates on 3.0 V.

Key Features

  • Low current consumption.
  • Supply voltage.
  • High efficiency : ICC = 4.0 mA TYP. @ VCC = 3.0 V : VCC = 2.4 to 3.3 V : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz.
  • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB TYP. @ f = 1.9 GHz GP = 15.5 dB TYP. @ f = 2.4 GHz.
  • Excellent isolation : ISL = 44 dB TYP. @ f = 1.0 GHz ISL = 42 dB TYP. @ f = 1.9 GHz ISL = 41 dB TYP. @ f = 2.

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TB SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 V. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.