UPC8178TB Datasheet | NEC

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TB SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE MUNICATIONS DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile munications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 V. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. Features - Low current consumption - Supply voltage - High efficiency : ICC = 4.0 m A TYP. @ VCC = 3.0 V : VCC = 2.4 to 3.3 V : PO (1 d B) = +3.0 d Bm TYP. @ f = 1.0 GHz PO (1 d B) = +1.5 d Bm TYP. @ f = 1.9 GHz PO (1 d B) = +1.0 d Bm TYP. @ f = 2.4 GHz - Power gain : GP = 13.5 d B TYP. @ f = 1.0 GHz GP = 15.5 d B TYP. @ f = 1.9 GHz GP = 15.5 d B TYP. @ f = 2.4 GHz - Excellent isolation : ISL = 44 d B TYP. @ f = 1.0 GHz ISL = 42 d B TYP. @ f = 1.9 GHz ISL = 41 d B TYP. @ f = 2.4 GHz - Operating frequency - Light weight : 0.1 to 2.4 GHz (Output port LC matching) : 7 mg (Standard value) - High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION - Buffer amplifiers on 0.1 to 2.4 GHz mobile munications system Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14730EJ2V0DS00 (2nd edition) Date Published August 2000 N CP(K) Printed in Japan © µPC8179TB ORDERING INFORMATION Part Number Package...