UPC8179TK Datasheet | NEC

SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE MUNICATIONS Features - HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) - SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V - HIGH EFFICIENCY: PO(1d B) = +2.0 d Bm TYP at f = 1.0 GHz PO(1d B) = +0.5 d Bm TYP at f = 1.9 GHz PO(1d B) = +0.5 d Bm TYP at f = 2.4 GHz - POWER GAIN: GP = 13.5 d B TYP at f = 1.0 GHz GP = 15.5 d B TYP at f = 1.9 GHz GP = 16.0 d B TYP at f = 2.4 GHz - EXCELLENT ISOLATION: ISL = 43 d B TYP at f = 1.0 GHz ISL = 42 d B TYP at f = 1.9 GHz ISL = 42 d B TYP at f = 2.4 GHz - LOW CURRENT CONSUMPTION: ICC = 4.0 m A TYP AT VCC = 3.0 V - OPERATING FREQUENCY: 0.1 to 2.4 GHz (Output port LC matching) - LIGHT WEIGHT: 3 mg Top View OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE TK 1.3±0.05 1.1±0.1 Bottom View 0.16±0.05 1.5±0.1 0.2±0.1 (0.9) 0.55±0.03 0.11±+0.1 -0.05 DESCRIPTION NEC's UPC8179TK is a silicon monolithic integrated circuit designed as an amplifier for mobile munications. This IC can realize low current consumption with external chip inductor. The incorporation of a chip identical to the conventional 6pin super minimold package (2.0 x 1.25 x 0.9 mm) µPC8179TB in a 6-pin leadless minimold package (1.5 x 1.1 x 0.55 mm) has enabled a reduction in mounting area of 50 %. The µPC8179TK is ideally suited to replace the µPC8179TB for footprint reduction and increased design density. This IC is manufactured using NEC's 30 GHz f MAX UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/ migration. Thus this IC has excellent performance uniformity and reliability. NEC's stringent quality assurance and test procedures assure the highest performance. consistency and reliability. APPLICATION - Buffer amplifiers for 0.1 to 2.4 GHz mobile munications systems. ELECTRICAL CHARACTERISTICS, (Unless...