| Part Number | UPC8179TK Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
NEC's UPC8179TK is a silicon monolithic integrated circuit designed as an amplifier for mobile communications. This IC can realize low current consumption with external chip inductor. The incorporatio.
* HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) * SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V * HIGH EFFICIENCY: PO(1dB) = +2.0 dBm TYP at f = 1.0 GHz PO(1dB) = +0.5 dBm TYP at f = 1.9 GHz PO(1dB) = +0.5 dBm TYP at f = 2.4 GHz * POWER GAIN: GP = 13.5 dB TYP at f = 1.0 G. |
UPC8179TK Datasheet and Specifications PDF
The UPC8179TK is a SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS.
| Part Number | UPC8179TK Datasheet |
|---|---|
| Description | SILICON MMIC LOW CURRENT AMPLIFIER |
| Manufacturer | Renesas |
| Overview |
The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC
can realize low current consumption with external chip inductor which can not be reali.
* Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V * Supply voltage : VCC = 2.4 to 3.3 V * Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz * Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB TYP. @ f. |