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uPC8179TK - SILICON MMIC LOW CURRENT AMPLIFIER

General Description

The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications.

can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC.

Key Features

  • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V.
  • Supply voltage : VCC = 2.4 to 3.3 V.
  • Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz.
  • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB TYP. @ f = 1.9 GHz GP = 16.0 dB TYP. @ f = 2.4 GHz.
  • Gain 1 dB compression output power : PO (1 dB) = +2.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +0.5 dBm TYP. @ f = 1.9.

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Datasheet Details

Part number uPC8179TK
Manufacturer Renesas
File Size 334.25 KB
Description SILICON MMIC LOW CURRENT AMPLIFIER
Datasheet download datasheet uPC8179TK Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimold package using same chip as the conventional µPC8179TB in 6-pin super minimold. TK suffix IC which is smaller package than TB suffix IC contributes to reduce mounting space by 50%. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.