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UPD444004 - 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT

Datasheet Summary

Description

The µPD444004 is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM.

Operating supply voltage is 5.0 V ± 0.5 V.

The µPD444004 is packaged in a 32-pin PLASTIC SOJ.

Features

  • 1,048,576 words by 4 bits organization.
  • Fast access time : 8, 10, 12 ns (MAX. ).
  • Output Enable input for easy.

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Datasheet Details

Part number UPD444004
Manufacturer NEC
File Size 116.68 KB
Description 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
Datasheet download datasheet UPD444004 Datasheet
Additional preview pages of the UPD444004 datasheet.

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DATA SHEET MOS INTEGRATED CIRCUIT µPD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD444004 is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444004 is packaged in a 32-pin PLASTIC SOJ. Features • 1,048,576 words by 4 bits organization • Fast access time : 8, 10, 12 ns (MAX.) • Output Enable input for easy application • Single +5.0 V power supply Ordering Information Part number Package Access time ns (MAX.) Supply current mA (MAX.) At operating 190 170 160 At standby 10 µPD444004LE-8 µPD444004LE-10 µPD444004LE-12 32-pin PLASTIC SOJ (10.16 mm (400)) 8 10 12 The information in this document is subject to change without notice.
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