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UPD444016 - 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT

Datasheet Summary

Description

The µPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.

Operating supply voltage is 5.0 V ± 0.5 V.

The µPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

Features

  • 262,144 words by 16 bits organization.
  • Fast access time : 8, 10, 12 ns (MAX. ).
  • Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16).
  • Output Enable input for easy.

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Datasheet Details

Part number UPD444016
Manufacturer NEC
File Size 101.79 KB
Description 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
Datasheet download datasheet UPD444016 Datasheet
Additional preview pages of the UPD444016 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS INTEGRATED CIRCUIT µPD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II). Features • 262,144 words by 16 bits organization • Fast access time : 8, 10, 12 ns (MAX.) • Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Output Enable input for easy application • Single +5.0 V power supply Ordering Information Part number Package Access time ns (MAX.) Supply current mA (MAX.
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