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UPD4482161 Datasheet (UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM

Manufacturer: NEC (now Renesas Electronics)

General Description

The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a 262,144-word by 32-bit and the µPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell.

The µPD4482161, µPD4482181, µPD4482321 and µPD4482361 integrate unique synchronous peripheral circuitry, 2-bit burst counter and output buffer as well as SRAM core.

All input registers are controlled by a positive edge of the single clock input (CLK).

Overview

DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH.

Key Features

  • 3.3 V or 2.5 V core supply.
  • Synchronous operation.
  • Operating temperature : TA = 0 to 70 °C (-A65, -A75, -A85, -C75, -C85) TA =.
  • 40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y).
  • Internally self-timed write control.
  • Burst read / write : Interleaved burst and linear burst sequence.
  • Fully registered inputs for flow through operation.
  • All registers triggered off positive clock edge.
  • 3.3 V or 2.5 V LVTTL Compatible : All.