UPD4482161 Datasheet PDF - NEC (UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM Specs

UPD4482161 - (UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM

Datasheet Summary

Description

The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a 262,144-word by 32-bit and the µPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell.

Features

3.3 V or 2.5 V core supply.
Synchronous operation.
Operating temperature : TA = 0 to 70 °C (-A65, -A75, -A85, -C75, -C85) TA =.
40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y).
Internally self-timed write control.
Burst read / write : Interleaved burst and linear burst sequence.
Fully registered inputs for flow through operation.
All registers triggered off positive clock edge.
3.3 V or 2.5 V LVTTL Compatible : All.

Datasheet Details

Part number	UPD4482161
Manufacturer	NEC
File Size	370.77 KB
Description	(UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM
Datasheet	UPD4482161 Datasheet
Additional preview pages of the UPD4482161 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a 262,144-word by 32-bit and the µPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The µPD4482161, µPD4482181, µPD4482321 and µPD4482361 integrate unique synchronous peripheral circuitry, 2-bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single clock input (CLK).

Published: Oct 28, 2005 |