Datasheet Summary
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4483362
8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
Description
The µPD4483362 is a 262,144 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The µPD4483362 is suitable for applications which require synchronous operation, high-speed, low voltage, highdensity memory and wide bit configuration, such as cache and buffer memory. The µPD4483362 is packaged in 100-pin PLASTIC LQFP with a 1.4 mm package thickness for high density and low capacitive loading.
Features
- Fully synchronous operation
- HSTL...