Datasheet4U Logo Datasheet4U.com

UPD5738T6N - WIDE BAND DPDT SWITCH

General Description

The μPD5738T6N is a CMOS MMIC DPDT (Double Pole Double Throw) switch which is developed for mobile communications, wireless communications and another RF switching applications.

This device can operate within frequency from 0.01 to 2.5 GHz, having low insertion loss and high isolation performances.

Key Features

  • Supply voltage.
  • Switch control voltage.
  • : VDD = 1.5 to 3.6 V (2.8 V TYP. ) : Vcont (H) = 1.5 to 3.6 V (2.8 V TYP. ) : Vcont (L) =.
  • 0.2 to +0.4 V (0 V TYP. ) Low insertion loss Note : Lins1 = 0.5 dB TYP. @ f = 0.01 to 0.05 GHz : Lins2 = 0.8 dB TYP. @ f = 0.05 to 1.0 GHz : Lins3 = 1.4 dB TYP. @ f = 1.0 to 2.0 GHz : Lins4 = 1.6 dB TYP. @ f = 2.0 to 2.5 GHz High isolation Note : ISL1 = 45 dB TYP. @ f = 0.01 to 0.05 GHz : ISL2 = 22 dB TYP. @ f = 0.05 to 1.0 GHz : ISL3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UPD5739T7A SiGe CMOS Renesas
UPD5702TU Si LD MOS POWER AMPLIFIER CEL
UPD5710TK SINGLE CONTROL CMOS SPDT SWITCH CEL
UPD5713TK WIDE BAND SPDT SWITCH CEL
UPD5713TK WIDE BAND SPDT SWITCH Renesas

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
UPD5710TK WIDE BAND SPDT SWITCH
UPD5715GR CMOS MMIC 4 x 2 IF SWITCH MATRIX
UPD5716GR CMOS MMIC 4 x 2 IF SWITCH MATRIX
UPD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET CMOS INTEGRATED CIRCUIT μPD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION The μPD5738T6N is a CMOS MMIC DPDT (Double Pole Double Throw) switch which is developed for mobile communications, wireless communications and another RF switching applications. This device can operate within frequency from 0.01 to 2.5 GHz, having low insertion loss and high isolation performances. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) (T6N) package, which allows high-density surface mounting. FEATURES • Supply voltage • Switch control voltage • : VDD = 1.5 to 3.6 V (2.8 V TYP.) : Vcont (H) = 1.5 to 3.6 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.4 V (0 V TYP.) Low insertion loss Note : Lins1 = 0.5 dB TYP. @ f = 0.01 to 0.05 GHz : Lins2 = 0.8 dB TYP. @ f = 0.05 to 1.