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UPD5747T6J - LOW NOISE AND HIGH GAIN AMPLIFIER

General Description

The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.

This device exhibits low noise and high voltage gain characteristics.

The package is 3-pin thin-type lead-less minimold, suitable for surface mount.

Key Features

  • Low Noise.
  • High Gain : NV =.
  • 101 dBV TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
  • 102 dBV TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ : GV = +5.7 dB TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ.
  • Low Consumption Current : IDD = 190 μA TYP. @ VDD = 1.5 V, RL = 2.2 kΩ.
  • Built-in the capacitor for RF noise immunity.
  • High ESD voltage.
  • 3-pin thin-type lead-less minimol.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less minimold, suitable for surface mount. FEATURES • Low Noise • High Gain : NV = −101 dBV TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −102 dBV TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ : GV = +5.7 dB TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ • Low Consumption Current : IDD = 190 μA TYP. @ VDD = 1.5 V, RL = 2.