NEC uPA1712
This product is P-Channel MOS Field Effect Transis- tor designed for power management applications of notebook computers and Li-ion battery protection circuit.| Part No. | uPA1712 |
|---|---|
| Datasheet | uPA1712 Download |
| Manufacturer |  NEC |
| Description | P-CHANNEL POWER MOS FET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low On-Resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −4.0 A) RDS(on)2 = 48 mΩ MAX. (VGS = −4 V, ID = −4.0 A)● Low Ciss Ciss = 2700 pF TYP.
● Built-in G-S Protection Diode
● Small and Surface Mount Package (Power SOP8) 1.8 MAX. 1.44 0.05 MIN. PACKAGE DIMENSIONS (in millimeter) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain 1 4 5.37 MAX. 6.0 ±0.3 4.4 0.8 +0.10 –0.05 0.15 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M 0.5 ±0.2 0.10
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, all terminals are connected) Drain to Source Voltage VDSS −30 V Gate to Source Voltage VGSS +20 V Drain Current (DC) ID(DC) +8.0 A Drain Current (pulse)Notes1 ID(pulse) +32 A Total Power Dissipation (TA = 25 °C)Notes2 PT 2.0 W Gate Channel Temperature Storage Temperature Tch 150 °C Tstg −55 to °C +150 Gate Protection Diode Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm2 × 0.7 mm Drain Body Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD.
