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2N2609 Datasheet PDF

NES 2N2609

P-CHANNEL POWER MOSFET

Part No. 2N2609
Datasheet 2N2609 Download
Manufacturer NES
Description P-CHANNEL POWER MOSFET
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2N2609 datasheet page 1 preview

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

(TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Value Gate-Source Voltage VGSS 30 0 Power Dissipation (1) TA = 25 C PD 300 Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 (1) Derate linearly, 1.71 mW/ 0C for TA = 250C.

ELECTRICAL CHARACTERISTICS

(TA = 25 C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL Gate-Source Breakdown Voltage V(BR)GSS V DS = 0, IG = 1.0 µAdc Gate Reverse Current V DS = 0, VGS = 30 Vdc IGSS VDS = 0, VGS = 15 Vdc Drain Current V GS = 0, V DS = 5.0 Vdc IDDSS Gate-Source Cutoff Voltage VGS(off) V DS = 5.0 V, I D = 1.0 µAdc Magnitude of Small-Signal, Common-Source Short-Circuit Forward Transfer Admittance V GS = 0, V DS = 5.0 Vdc, f = 1.0 kHz Yfs2 Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0, V DS = 5.0 Vdc, f = 1.0 MHz Ciss Common-Source Spot Noise Figure V GS = 0, V DS = 5.0 Vdc, f = 1.0 kHz NF B W = 16%, R G = 1.0 megohms, egen = 1.82 mVdc, 0 MIL-PRF QPL DEVICES Units V mW 0 C TO-18 (TO-206AA) MIN.