2SC1815 Datasheet | NIGE

FEATURES : ※ Collector Current: Ic=150m A ※ Power Dissipation 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg .gd-nige. Value 60 50 5 150 200 625 150 -55～+150 Unit V V V m A m W ℃/W ℃ ℃ Rev 1.1 SOT-23 Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 0.1m A, IB=0 Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 Collector cut-off current ICBO VCB= 60 V , IE=0 Collector cut-off current ICEO VCB= 50V , IE=0 Emitter cut-off current IEBO VEB= 5V , IC=0 DC current...