NIGE 2SC1815
SOT-23 Plastic-Encapsulate NPN Transistors
FEATURES
: ※ Collector Current: Ic=150mA ※ Power Dissipation 1.BASE 2.EMITTER 3.COLLECTORMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg 1 Value 60 50 5 150 200 625 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ Rev 1.1 2SC1815 SOT-23 Plastic-Encapsulate TransistorsELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 60 Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 Collector cut-off current ICBO VCB= 60 V , IE=0 Collector cut-off current ICEO VCB= 50V , IE=0 Emitter cut-off current IEBO VEB= 5V , IC=0 DC current gain hFE VCE=6V, IC= 2mA 130 hFE VCE=5V, IC=...