Download the P5803NAG datasheet PDF.
This datasheet also covers the P5803NAG-NIKO variant, as both devices belong to the same n-&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
Full PDF Text Transcription for P5803NAG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
P5803NAG. For precise diagrams, and layout, please refer to the original PDF.
-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) N-Channel 30V 58mΩ P-Channel -30V 115mΩ ID 3A -2A DD D1 S1 D2 GG SS 6 54 1 23 G1 S2 G2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM PD Tj, Tstg 30 -30 ±20 ±20 3 -2 2.3 -1.6 30 -10 0.8 0.8 0.5 0.