P5803NAG Datasheet
P5803NAG Datasheet (UNIKC)
UNIKC
P5803NAG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 58mΩ @VGS = 10V -30V 115mΩ @VGS = -10V ID Channel 3A N -2A P TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Un.
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P5803NAG Datasheet (NIKO-SEM)
NIKO-SEM
NIKO-SEM N- & P-Channel Enhancement Mode P5803NAG Field Effect Transistor TSOP-6 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) N-Channel 30V 58mΩ P-Channel -30V 115mΩ ID 3A -2A DD D.
own Voltage V(BR)DSS Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS STATIC VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±20V LIMITS UNIT MIN TYP MAX N-Ch 30 P-Ch -30 N-Ch 1 1.2 2.5 P-Ch -1 -1.6 -2.5 V .