Full PDF Text Transcription for P5803NAG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
P5803NAG. For precise diagrams, and layout, please refer to the original PDF.
P5803NAG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 58mΩ @VGS = 10V -30V 115mΩ @VGS = -10V ID Channel 3A N -2A P TSOP- 06 ABSOLUTE MAXIMUM R...
View more extracted text
0V 115mΩ @VGS = -10V ID Channel 3A N -2A P TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70 °C N3 P -2 ID N 2.3 P -1.6 Pulsed Drain Current1 N 30 IDM P -10 Power Dissipation TA = 25 °C TA = 70 °C N 0.8 P 0.8 PD N 0.5 P 0.5 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RqJA 1Pulse width limited by maximum junction temperature. Ver 1.
P5803NAG Datasheet
