PV608BA - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PV608BA, a member of the PV608BA-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

NIKO-SEM

📥 Download Datasheet

Datasheet Details

Part number	PV608BA
Manufacturer	NIKO-SEM
File Size	234.45 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PV608BA Datasheet
Additional preview pages of the PV608BA datasheet.

📁 Similar Datasheet

PV600BA - MOSFET (UNIKC)
PV601CA - N&P-Channel MOSFET (UNIKC)
PV604CA - N&P-Channel MOSFET (UNIKC)
PV606BA - MOSFET (UNIKC)
PV60K3225 - Low & Medium Voltage Plastic Encapsulated SMD Varistor (Stackpole Electronics)
PV60K4032 - Low & Medium Voltage Plastic Encapsulated SMD Varistor (Stackpole Electronics)
PV6 - Vandal and Water Resistant Long Life Expectancy (lambind)
PV628BA - MOSFET (UNIKC)
PV628DA - MOSFET (UNIKC)
PV650BA - MOSFET (UNIKC)

Other Datasheets by NIKO-SEM

PV609CA - N- & P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PV608BA SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 4.7mΩ ID 15A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TA = 25 ° C TA = 70 ° C L = 0.1mH TA = 25 ° C TA = 70 ° C VDS VGS ID IDM IAS EAS PD TJ, Tstg G: GATE D: DRAIN S: SOURCE LIMITS 40 ±20 15 12 100 46 104 2.1 1.

Published: Dec 2, 2024 |