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PV608BA Datasheet N-channel Enhancement Mode Field Effect Transistor

Manufacturer: NIKO-SEM

This datasheet includes multiple variants, all published together in a single manufacturer document.

PV608BA Overview

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PV608BA Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Junction & Storage Temperature Range TA = 25 ° C TA = 70 ° C L = 0.1mH TA = 25 ° C TA = 70 ° C VDS VGS -55 to 150 UNITS V V Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A 40 V

More Datasheets from NIKO-SEM

Part Number Description
PV609CA N- & P-Channel Enhancement Mode Field Effect Transistor

PV608BA Distributor