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PV601CA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 22mΩ @VGS =10V
-30V
28mΩ @VGS = -10V
ID 7A -6.4A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70°C
N7 P -6.4 ID N 5.6 P -5.1
Pulsed Drain Current1
N 25 IDM P -23
Avalanche Current
N 12 IAS P -19.9
Avalanche Energy
L = 0.1mH
N 7.2 EAS P 19.8
Power Dissipation3
TA = 25 °C TA = 70 °C
N 2
P PD
N 1.3
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.
PV601CA Datasheet
