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PV600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10.8mΩ @VGS = 10V
ID 10A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
10 8 40
Avalanche Current
IAS 17.6
Avalanche Energy
L =0.1mH
EAS
15.5
Power Dissipation
TA= 25 °C TA =70 °C
PD
1.95 1.25
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient
RqJA
64
Junction-to-Case
RqJC
25
1Pulse width limited by maximum junction temperature.
PV600BA Datasheet
