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PZ5S6JZ - Dual N-Channel Enhancement Mode Field Effect Transistor

Download the PZ5S6JZ datasheet PDF. This datasheet also covers the PZ5S6JZ-NIKO variant, as both devices belong to the same dual n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • ESD Protection - HBM Class : 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PZ5S6JZ-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PZ5S6JZ
Manufacturer NIKO-SEM
File Size 226.08 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PZ5S6JZ Datasheet

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Part Number Description
PZ567JZ Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM Dual N-Channel Logic Level PZ5S6JZ Enhancement Mode Field Effect Transistor SOT-363 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 480mΩ ID 0.57A 1 2 1 2 Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. • ESD Protection - HBM Class : 2. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. • Space Limit & Smart Devices Applications.