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NSI6622NA Datasheet High Reliability Isolated Dual-Channel Gate Driver

Manufacturer: NOVOSENSE

Download the NSI6622NA datasheet PDF. This datasheet also includes the NSI6602NA variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NSI6602NA-NOVOSENSE.pdf) that lists specifications for multiple related part numbers.

Overview

NSI66x2x High Reliability Isolated Dual-Channel Gate Driver Datasheet (EN) 1.1 Product Overview NSI66x2x is a family of high reliability isolated dualchannel gate driver ICs which can be configured as two low-side drivers, two high-side drivers, or a halfbridge driver.

Each output could source 6A and sink 8A peak current with fast 33ns propagation delay and 6ns maximum delay matching.

It is designed to drive power MOSFET, SiC, GaN, and IGBT transistors.

Key Features

  • Isolated dual channel driver.
  • Input side supply voltage: 3V to 18V.
  • Driver side supply voltage: up to 25V with UVLO.
  • 6A peak source and 8A peak sink output.
  • High CMTI: ±150kV/us typical.
  • 33ns typical propagation delay.
  • 6ns maximum delay matching.
  • 9ns maximum pulse width distortion.
  • Programmable deadtime.
  • Accepts minimum input pulse width 20ns.
  • Operation temperature: -40℃~125℃.
  • RoHS & REACH Compliance Safety Regulatory Approvals.