NSI6622NB-Q1 Datasheet PDF (High Reliability Isolated Dual-Channel Gate Driver)

NSI6622NB-Q1 - High Reliability Isolated Dual-Channel Gate Driver

This page provides the datasheet information for the NSI6622NB-Q1, a member of the NSI6602NA-Q1 High Reliability Isolated Dual-Channel Gate Driver family.

Description

7.1.

Features

Isolated dual channel driver.
Input side supply voltage: 3V to 18V.
Driver side supply voltage: up to 25V with UVLO.
6A peak source and 8A peak sink output.
High CMTI: ±150kV/us typical.
33ns typical propagation delay.
6ns maximum delay matching.
9ns maximum pulse width distortion.
Programmable deadtime.
Accepts minimum input pulse width 20ns.
Operation temperature: -40℃~125℃.
RoHS & REACH Compliance.
AEC-Q100 (Grade 1) qualified.

Datasheet Details

Part number	NSI6622NB-Q1
Manufacturer	NOVOSENSE
File Size	1.70 MB
Description	High Reliability Isolated Dual-Channel Gate Driver
Datasheet	NSI6622NB-Q1 Datasheet
Additional preview pages of the NSI6622NB-Q1 datasheet.

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Full PDF Text Transcription

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NSI66x2x-Q1 High Reliability Isolated Dual-Channel Gate Driver Datasheet (EN) 1.1 Product Overview NSI66x2x is a family of high reliability isolated dualchannel gate driver ICs which can be configured as two low-side drivers, two high-side drivers, or a halfbridge driver. Each output could source 6A and sink 8A peak current with fast 33ns propagation delay and 6ns maximum delay matching. It is designed to drive power MOSFET, SiC, GaN, and IGBT transistors. The NSI66x2x provides 3000Vrms isolation in SOP16 or SOP14 package, and 5700Vrms isolation in SOW16 or SOW14 package. System robustness is supported by 150kV/us typical common-mode transient immunity (CMTI). The driver operates with a maximum supply voltage of 25V, while the input-side accepts from 3V to 18V supply voltage.

Published: Dec 11, 2025 |